W29N08GV 2 chip stack 8G-Bit NANDFLASH MEMORY
●GENERAL DESCRIPTION:
■The W29N08GV (8G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 2.7V to 3.6V power supply with active current consumption as low as 25mA and 10uA for CMOS standby current.
■The memory array totals 1,107,296bytes, and organized into 8,192 erasable blocks. Each block consists of 64 programmable pages of 2,112-bytes (1056 words) each. Each page consists of 2,048-bytes (1024 words) for the main data storage area and 64-bytes (32 words) for the spare data area (The spare area is typically used for error management functions).
■The W29N08GV is double chip stack of W29N04GV. Then, this document shows specified features, functions of W29N08GV. Detail functions, commands operation, AC, DC characteristics and restrictions refer to W29N04GV datasheet.
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Datasheet |
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Please see the document for details |
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TSOP;VFBGA |
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English Chinese Chinese and English Japanese |
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December 12th, 2017 |
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Revision C |
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3.8 MB |
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