W29N02GW/Z 2G-BIT1.8V NANDFLASH MEMORY
●GENERAL DESCRIPTION:
■The W29N02GW/Z (2G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as, voice, video, text and photos. The device operates on a single 1.7V to 1.95V power supply with active current consumption as low as 13mA at 1.8V and 10uA for CMOS standby current.
■The memory array totals 276,824,064 bytes, and organized into 2,048 erasable blocks of 135,168 bytes (135,168 words). Each block consists of 64 programmable pages of 2,112-bytes (1056 words) each. Each page consists of 2,048-bytes (1024 words) for the main data storage area and 64-bytes (32words) for the spare data area (The spare area is typically used for error management functions).
■The W29N02GW/Z supports the standard NAND flash memory interface using the multiplexed 8-bit (16-bit) bus to transfer data, addresses, and command instructions. The five control signals, CLE, ALE, #CE, #RE and #WE handle the bus interface protocol. Also, the device has two other signal pins, the #WP (Write Protect) and the RY/#BY (Ready/Busy) for monitoring the device status.
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W29N02GW 、 W29N02GZ 、 W29N02GZSIBA 、 W29N02GWSIBA 、 W29N02GZBIBA 、 W29N02GWBIBA |
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Datasheet |
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Please see the document for details |
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TSOP;VFBGA |
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English Chinese Chinese and English Japanese |
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December 4th, 2017 |
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Revision E |
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3.1 MB |
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