CS10N80F A9D-G Silicon N-Channel Power MOSFET data sheet
●General Description
■S10N80F A9D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard.
●FEATURES:
■Fast Switching
■ESD Improved Capability
■Low Gate Charge (Typical Data: 65nC)
■Low Reverse transfer capacitances(Typical: 25pF)
■100% Single Pulse avalanche energy Test
■Halogen Free
|
Silicon N-Channel Power MOSFET 、 silicon N-channel Enhanced VDMOSFETs |
|
|
[ PC POWER ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO-220F |
|
|
English Chinese Chinese and English Japanese |
|
|
2019/08/13 |
|
|
|
|
|
|
|
|
638 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
