LY61L102516A 1024K X 16 BIT HIGH SPEED CMOS SRAM
●GENERAL DESCRIPTION
■The LY61L102516A is a 16M-bit high speed CMOS static random access memory organized as 1024K words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
■The LY61L102516A operates power supply either 1.8V or 3.3V, and all inputs and outputs are fully TTL compatible.
●FEATURES
■Fast access time :
▲10ns (VCC=3.3V)
▲15ns (VCC=1.8V)
■Low power consumption:
▲Operating current:
◆70mA (3.3V TYP.)
◆50mA (1.8V TYP.)
▲Standby current : 4mA(TYP.)
■Power supply: 1.8 or 3.3V
■All inputs and outputs TTL compatible
■Fully static operation
■Tri-state output
■Data byte control :
▲LB# (DQ0 ~ DQ7)
▲UB# (DQ8 ~ DQ15)
■Data retention voltage : 1.5V (MIN.)
■Green package available
■Package :
▲54-pin 400mil TSOP II
▲48-ball 6mm x 8mm TFBGA
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LY61L102516A 、 LY61L102516AGL 、 LY61L102516A(I) 、 LY61L102516A-10 、 LY61L102516A-12 、 LY61L102516AML-10 、 LY61L102516AML-10T 、 LY61L102516AML-10I 、 LY61L102516AML-10IT 、 LY61L102516AGL-10 、 LY61L102516AGL-10T 、 LY61L102516AGL-10I 、 LY61L102516AGL-10IT |
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1024K X 16 BIT HIGH SPEED CMOS SRAM 、 16M-bit high speed CMOS static random access memory |
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Datasheet |
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Please see the document for details |
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TSOP II;TFBGA |
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English Chinese Chinese and English Japanese |
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Aug.16.2017 |
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Rev. 1.3 |
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1.6 MB |
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