LY626416 64K X 16BIT LOW POWER CMOS SRAM
●GENERAL DESCRIPTION
■The LY626416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
■The LY626416 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
■The LY626416 operates from a single power supply of 4.5V ~ 5.5V and all inputs and outputs are fully TTL compatible
●FEATURES
■Fast access time : 45/55/70ns
■Low power consumption:
▲Operating current : 50/40/30mA (TYP.)
▲Standby current :
◆3μA@5V(TYP.) LL/SL version
◆2μA@3V(TYP.) SL version
■Single 4.5V ~ 5.5V power supply
■All inputs and outputs TTL compatible
■Fully static operation
■Tri-state output
■Data byte control :
▲LB# (DQ0 ~ DQ7)
▲UB# (DQ8 ~ DQ15)
■Data retention voltage : 1.5V (MIN.)
■Green package available
■Package :
▲44-pin 400 mil TSOP II
▲48-ball 6mm x 8mm TFBGA
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