CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

2022-09-02

Cree's CMPA1D1E025F is a gallium nitride (GaN)High Electron Mobility Transistor (HEMT)based monolithic microwave integrated circuit (MMIC)on a silicon carbide substrate,using a 0.25 μm gate length fabrication process.The Ku Band 25W MMIC is targeted for commercial Ku Band applications.It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead,25 mm x 9.9 mm metal/ceramic flanged package.
◆Features
■24 dB Small Signal Gain
■40 W Typical Pulsed PSAT
■Operation up to 40 V
■20 W linear power under OQPSK
■Class A/B high gain,high efficiency 50 ohm MMIC Ku Band high power amplifier

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CMPA1D1E025FCMPA1D1E025F-AMPCMPA1D1E025F-TB

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Part#

Ku-Band GaN MMICPower Amplifier

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Satellite Communications ]

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Datasheet

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Please see the document for details

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440208

English Chinese Chinese and English Japanese

June 2015

Rev 1.0

1.8 MB

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