MA4GP907 GaAs Flip Chip PIN
●Description
■The MA4GP907is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device-to-device uniformity and produces extremely low parasitics. The diode exhibits an exceptionally low RC product (0.1 ps) and a 2 -3 ns switching speed. The chips are fully passivated with silicon nitride and have an added BCB polymer layer for scratch protection. The BCB protective coating prevents damage to the diode junction and anode air-bridge during handling and assembly.
The ultra low capacitance of the MA4GP907 allows for operation at millimeter wave frequencies for RF switches and phase shifter applications. The diode is designed to be used in pulsed or CW applications, where single digit ns switching speed is required. The low capacitance of this devicemakes it ideal for use in many microwave multi-throw switch assemblies, where the series capacitance of each "off" port adversely loads the input and affects VSWR.
●Features
■Low Series Resistance
■Ultra Low Capacitance
■Millimeter Wave Switching & Cutoff Frequency
■2 ns Switching Speed
■Can be Driven by a Buffered TTL
■Silicon Nitride Passivation
■Polyimide Scratch Protection
■RoHS Compliant
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/01/29 |
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Rev. V10 |
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DC-0007455 |
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696 KB |
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