MSW20N60 600V N-Channel MOSFET

2022-08-11

●Description
■This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
●FEATURES
■RDS(on) (Typical 0.26Ω )@VGS=10V
■Gate Charge (Typical 80nC)
■Improved dv/dt Capability, High Ruggedness
■100% Avalanche Tested
■Maximum Junction Temperature Range (150°C)
■RoHS compliant package

Bruckewell

MSW20N60

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Part#

N-Channel MOSFET

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Datasheet

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Please see the document for details

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TO-247;TO-3P

English Chinese Chinese and English Japanese

2014

Rev. A

596 KB

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