MSW20N60 600V N-Channel MOSFET
●Description
■This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.
●FEATURES
■RDS(on) (Typical 0.26Ω )@VGS=10V
■Gate Charge (Typical 80nC)
■Improved dv/dt Capability, High Ruggedness
■100% Avalanche Tested
■Maximum Junction Temperature Range (150°C)
■RoHS compliant package
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Datasheet |
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Please see the document for details |
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TO-247;TO-3P |
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English Chinese Chinese and English Japanese |
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2014 |
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Rev. A |
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596 KB |
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