CMS2010-HF MOSFET

2022-09-30

●Description:The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
●Features
■VDS = 20V,ID = 7A RDS(ON) <24mΩ @ VGS=2.5V RDS(ON) <18mΩ @ VGS=4.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package

Comchip

CMS2010-HFNCE2010E

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Part#

MOSFET

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Datasheet

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Please see the document for details

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TSSOP8

English Chinese Chinese and English Japanese

2019/02/15

REV:A

SP-JTR36

1 MB

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