KTA2014 PNPSilicon Epitaxial Planar Transistor Production specification
● FEATURES:
■ Power dissipation.(P C =200mW)
■ Excellent h-FE Linearity.
■ Complementary to KTC4075.
■ Small package.
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Datasheet |
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Please see the document for details |
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SOT-323 |
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English Chinese Chinese and English Japanese |
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2019/10/14 |
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297 KB |
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