STPSC12065-Y Automotive 650 V, 12 A, silicon carbide power Schottky diode
●Description
■The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
■Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
●Features
■AEC-Q101 qualified
■No or negligible reverse recovery
■Switching behavior independent of temperature
■Dedicated to PFC applications
■High forward surge capability
■PPAP capable
■Operating T-j from -40 °C to 175 °C
■V-RRM guaranteed from -40 to +175 °C
■D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
■ECOPACK^®2 compliant
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STPSC12065-Y 、 STPSC12065G2Y-TR 、 STPSC12065GY-TR 、 STPSC12065DY |
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silicon carbide power Schottky diode 、 ultra high performance power Schottky diode |
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[ On board charger ][ PFC applications ] |
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Datasheet |
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Please see the document for details |
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TO-220AC;D²PAK |
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English Chinese Chinese and English Japanese |
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December 2018 |
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Rev 4 |
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DS11624 |
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725 KB |
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