2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
◆Small package (dual type)
◆High voltage and high current: V-CEO = 50 V, I-C = 150 mA (max)
◆High h-FE: h-FE = 120 to 400
◆Excellent h-FE linearity: h-FE (I-C = 0.1 mA)/h-FE (I-C = 2 mA) = 0.95 ◆(typ.)
Complementary to 2SA1873
Datasheet |
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Please see the document for details |
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2-2L1A |
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English Chinese Chinese and English Japanese |
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2014-03-01 |
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308 KB |
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