2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
◆Small package (dual type)
◆High voltage and high current: V-CEO = −50 V, I-C = −150 mA (max)
◆High h-FE
◆Excellent h-FE linearity: h-FE (I-C = −0.1 mA)/h-FE (I-C = −2 mA) = 0.95 (typ.)
◆Complementary to 2SC4944
Datasheet |
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Please see the document for details |
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2-2L1A |
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English Chinese Chinese and English Japanese |
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2014-03-01 |
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284 KB |
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