2SA1832 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
●High voltage and high current: V-CEO = −50 V, I-C = −150 mA (max)
●Excellent hFE linearity: h-FE (I-C = −0.1 mA)/ h-FE (I-C = −2 mA) = 0.95 (typ.)
●High hFE: hFE = 70 to 400
●Complementary to 2SC4738
●Small package
Datasheet |
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Please see the document for details |
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2-2H1A |
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English Chinese Chinese and English Japanese |
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2014-03-01 |
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267 KB |
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