2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

PublishTime：2022-07-12

◆High emitter-base voltage: V-EBO = 25 V (min)
◆High reverse h-FE: Reverse h-FE = 150 (typ.) (V-CE = −2 V, I-C = −4 mA)
◆Low on resistance: R-ON = 1 Ω (typ.) (I-B = 5 mA)
◆High DC current gain: h-FE = 200 to 1200
◆Small package

Brand of Product：	TOSHIBA
Part#：	2SC3326 More Part#
Product Category：	Silicon NPN Epitaxial Type Transistor More
Application：	[ Muting Applications ][ Switching Applications ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-236MOD;SC-59;2-3F1A
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2019-05-23
Version Number：
Data Encoding：
Data Size：	399 KB

Data section preview(2pages)

- The full preview is over. If you want to read the whole 5 page document,please Sign in/Register -

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits