GaN Technology Overview
●For over four decades, power management efficiency and cost have improved steadily as innovations in power metal oxide silicon field effect transistor (MOSFET) structures, technology, and circuit topologies have kept pace with the growing need for electrical power in our daily lives. In the new millennium, however, the rate of improvement has slowed as the silicon power MOSFET asymptotically approaches its theoretical bounds.
●Power MOSFETs first appeared in 1976 as alternatives to bipolar transistors. These majority‐carrier devices were faster, more rugged, and had higher current gain than their minority‐carrier counterparts (for a discussion of basic semiconductor physics, a good reference is [1]). As a result, switching power conversion became a commercial reality. Among the earliest high‐volume consumers of power MOSFETs were AC–DC switching power supplies for early desktop computers, followed by variable‐speed motor drives, fluorescent lights, DC–DC converters, and thousands of other applications that populate our daily lives.One of the first power MOSFETs was the IRF100 from International Rectifier Corporation, introduced in November 1978. It boasted a 100V drain‐source breakdown voltage and a 0.1Ω on‐resistance (RDS(on)), the benchmark of the era. With a die size over 40mm² and with a $34 price tag, this product was not destined to supplant the venerable bipolar transistor immediately. Since then, several manufacturers have developed many generations of power MOSFETs. Benchmarks have been set, and subsequently surpassed, each year for 40‐plus years. As of the date of this writing, the 100V benchmark arguably is held by Infineon with the BSZ096N10LS5. In comparison with the IRF100 MOSFET's resistivity figure of merit (4Ω mm²), the BSZ096N10LS5 has a figure of merit of 0.060Ω mm². That is almost at the theoretical limit for a silicon device [2].
●There are still improvements to be made in power MOSFETs. For example, super‐junction devices and IGBTs have achieved conductivity improvements beyond the theoretical limits of a simple vertical, majority‐carrier MOSFET. These innovations may still continue for quite some time and certainly will be able to leverage the low‐cost structure of the power MOSFET and the know‐how of a well‐educated base of designers who, after many years, have learned to squeeze every ounce of performance out of their power conversion circuits and systems.
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EPC2112 、 EPC2151 、 BSZ096N10LS5 、 EPC2100 |
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GaN Transistors 、 power metal oxide silicon field effect transistor |
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/08/30 |
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3.2 MB |
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