MB85RS1MT Memory FRAM 1M (128 K x 8) Bit SPI

2020-03-31
MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming thenonvolatile memory cells.
MB85RS1MT adopts the Serial Peripheral Interface (SPI).
The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significantimprovement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes no wait time.

Fujitsu

MB85RS1MTMB85RS1MTPW-G-APEWE1MB85RS1MTPNF-G-JNE1

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Part#

FRAM (Ferroelectric Random Access Memory) chip

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Datasheet

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ESD(CDM,>±1000V) 、 ESD(HBM,>±2000V) 、 ISP/JEDEC J-STD-020D 、 Lead-free 、 RoHS

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Please see the document for details

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8-pin WLP;WLP-8P-M01

English Chinese Chinese and English Japanese

2019.06

DS501-00059-1v0-E

1.5 MB

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