TK10A80E MOSFETs Silicon N-Channel MOS (π-MOS)
◆Features
■Low drain-source on-resistance: R-DS(ON) = 0.7 Ω (typ.)
■Low leakage current : I-DSS = 10 μA (max) (V-DS = 640 V)
■Enhancement mode: V-th = 2.5 to 4.0 V (V-DS = 10 V, I-D = 1 mA)
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Datasheet |
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Please see the document for details |
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TO-220SIS |
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English Chinese Chinese and English Japanese |
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2014-03-04 |
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Rev.3.0 |
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361 KB |
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