2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
◆High voltage: V-CEO = 120 V
◆Excellent h-FE linearity: h-FE (I-C = 0.1 mA)/ hFE (I-C = 2 mA) = 0.95 (typ.)
◆High h-FE: h-FE = 200 to 700
◆Low noise: NF(2) = 0.2dB (typ.), 3dB (max)
◆Complementary to 2SA1312
◆Small package
Datasheet |
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Please see the document for details |
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2-3F1A |
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English Chinese Chinese and English Japanese |
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2014-03-01 |
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393 KB |
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