NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Overview
●These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices areparticularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery poweredcircuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
●Features
■1.6A, 30V. RDS(ON) = 0.125Ω @ VGS= 4.5 V.
■Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
■High density cell design for extremely low RDS(ON).
■Exceptional on-resistance and maximum DC current capability.
■Compact industry standard SOT-23 surface mount package
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N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Datasheet |
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Please see the document for details |
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SOT-23;SOT-23-3 |
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English Chinese Chinese and English Japanese |
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8/12/2019 |
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169 KB |
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