2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
●High DC current gain: h-FE (1) = 100 to 320
●Low saturation voltage: V-CE (sat) = 0.4 V (max) (I-C = 500 mA, I-B = 20 mA)
●Complementary to 2SA1298
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Please see the document for details |
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TO-236MOD;SC-59;2-3F1A |
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English Chinese Chinese and English Japanese |
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2014-03-01 |
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223 KB |
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