KT12DS10 High-Temperature, 1200V, 10Amp SiC JBS Diode

2020-06-09
KT12DS10 is a 1200V,10A high performance and high tem-perature 4H-SiC junction barrier Schottky diode(JBS) able to operate with a junction temperature up to 250℃.This diode is suitable for high frequency and high power sys-tems with minimum cooling requirements and/or high tempera-ture environments. The KT12DS10 diode enable cost reduction.

CALY Technologies

KT12DS10BKT12DS10T57KT12DS10

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High-Temperature,1200V,10Amp SiC JBS Diode

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Power conversion ]industrial drives,switched-mode power supplies ]power factor correction, voltage blocking ]High reliability applications, Automotive ]Aeronautics &Aero-space, Down-hole ]

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Datasheet

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RoHS

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Please see the document for details

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TO-257;TO257

English Chinese Chinese and English Japanese

2018-08-08

rev 1B

DS-00002-16

415 KB

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