FDD5N60NZ Power MOSFET N-Channel UniFETM II Product Overview
●UniFETTM II MOSFET is a high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
●Features
■RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.0A
■Low gate charge ( Typ. 10nC)
■Low Crss ( Typ. 5pF)
■100% avalanche tested
■Improved dv/dt capability
■ESD improved capability
■RoHS compliant
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[ switching power converter applications ][ power factor correction ][ PFC ][ FPD TV power ][ flat panel display TV power, ][ ATX ][ electronic lamp ballasts ] |
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Datasheet |
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Please see the document for details |
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DPAK;DPAK-3;TO-252-3 |
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English Chinese Chinese and English Japanese |
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8/15/2019 |
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171 KB |
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