EPC9048C Development Board Quick Start Guide

2019-08-19

The EPC9048C development board shown in figure 1 is a 200 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring two EPC2034C enhancement mode (eGaN®) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2034C eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9048C development board is 1.5” x 2” and contains two EPC2034C eGaN FETs in a half bridge configuration. As supplied, the high side gate drive uses a digital isolator and both FETs use the Texas Instruments UCC27611 gate driver. The board also contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation, as well as the option to add trimmer resistors for adjustable deadtime to provide separate high and low side inputs, and an isolator for the low side gate drive. A block diagram of the circuit is given in figure 2.

EPC

EPC9048CEPC2034CGRM188R61E105KA12DC1608C0G1H101J080AAC1005X7R1C224K050BCC2012X7T2E104K125AEC0402C100J5GACTUC1005C0G1H101J050BAC3216X7T2E224K160AASDM03U40-7DFLS1200RMCF0402FT4R70MM5Z5V6ST1G61300111121613002111214-103185-0-0468602-224HLFRMCF0603FT10K0ERJ-3GEY0R00VRMCF0603FT100RRMCF0603FT470RERJ-2GE0R00XRMCF0402FT1R005015NC7SZ00L6XSi8610BCNC7SZ08L6XUCC27611

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Development Board

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User's Guide

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2019/08/11

Revision 2.0

1.4 MB

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