2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type
●High DC current gain: h-FE = 250 to 400 (IC = 2.5 A)
●Low collector-emitter saturation: V-CE (sat) = 0.18 V (max)
●High speed switching: t-f = 13 ns (typ)
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Datasheet |
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Please see the document for details |
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2-7J1A |
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English Chinese Chinese and English Japanese |
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2013-11-01 |
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259 KB |
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