EPC eGaN® FETs Reliability Testing: Phase 7
●Efficient Power Conversion (EPC) Corporation’s enhancement-mode gallium nitride (eGaN®) FETs continue to expand into new market applications due to the competitive performance advantages over traditional power MOSFETs.Wireless power,DC-DC conversion, RF base station transmission,satellite systems,audio amplifiers,and LiDAR are just a few example applications that can take advantage of the superior performance of eGaN FETs.
●Equally important is ensuring that eGaN FETs are intrinsically reliable within the intended applications.EPC’s approach is to continually increase the amount of reliability test data statistics, further enhance the knowledge database,and prove that eGaN technology and products are a viable and dependable replacement solution to tradition silicon devices.In addition to a comprehensive review of results from previous reports,this Phase Seven Report includes new reliability data for intermittent operating life (IOL), early life failure rate (ELFR), electrostatic discharge (charge device model), and additional qualification of several products of the largest die size family and 300 V products.
●The first section of this paper builds on the database of qualification data for eGaN FETs, including new data extending the product voltage range up to 300 V.Section II deals with the thermo-mechanical reliability of eGaN products’ wafer level chip scale packaging, including recent temperature cycling (TC) and IOL data.Section III covers infant mortality testing on a large sample population,providing an upper bound on the early life failure rate.The last section will present reliability data in the field.
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EPC2025 、 EPC2001C 、 EPC2016C 、 EPC2032 、 EPC2036 、 EPC2029 、 EPC2021 、 EPC2024 、 EPC2023 、 EPC800x 、 EPC2014C 、 EPC8004 、 EPC2035 、 EPC2010C 、 EPC2012C 、 EPC2015 、 EPC2012 、 EPC2033 、 EPC2038 、 EPC2022 、 EPC2001 |
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/05/05 |
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