GaN Integration for Higher DC-DC Efficiency and Power Density
Gallium nitride, when grown on a silicon crystal and transformed into an enhancement mode (eGaN®) FET, enables some amazing new end-use applications, such as wireless power transfer, LiDAR, and envelope track-ing [1]. eGaN FETs can also replace the silicon-based power MOSFET in most existing applications including AC-DC and DC-DC power conversion, yielding substantial performance gains. The prize is a $12B market now occupiedby an aging incumbent.
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EPC2100 、 EPC2102 、 EPC2101 、 EPC2103 、 EPC2105 、 EPC2104 、 EPC9036 、 EPC9038 、 EPC9037 、 EPC9039 、 EPC9041 、 EPC9040 |
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/05/05 |
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AN018 |
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1.2 MB |
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