eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the similarities and differences between these two technologies is a necessary foundation for understanding how much we can improve existing power conversion systems.
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White Paper |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/05/05 |
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WP007 |
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1.4 MB |
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