MBR3045ST,MBRB3045CT-1 Switch‐mode Power Rectifier

PublishTime：2022-07-07

●This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
●Features
■Extremely Efficient Trench with Field Stop Technology
■TJmax = 175°C
■Soft Fast Reverse Recovery Diode
■Optimized for High Speed Switching
■5 μs Short−Circuit Capability
■These are Pb−Free Devices

Brand of Product：	ON Semiconductor
Part#：	MBR3045ST 、 MBRB3045CT-1 、 MBR3045STG 、 MBRB3045CT−1G More Part#
Product Category：	IGBT 、 Insulated Gate Bipolar Transistor More
Application：	[ demanding switching applications ][ Solar Inverters ][ Uninterruptible Power Supplies (UPS) ][ Welding ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	September, 2014
Version Number：	Rev. 9
Data Encoding：
Data Size：	434 KB

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