GR1500JT17-247 Normally – OFF Silicon Carbide Junction Transistor
●Features
■175 °C Maximum Operating Temperature
■Gate Oxide Free SiC Switch
■Exceptional Safe Operating Area
■Excellent Gain Linearity
■Temperature Independent Switching Performance
■Low Output Capacitance
■Positive Temperature Coefficient of RDS,ON
■Suitable for Connecting an Anti-parallel Diode
●Advantages
■Compatible with Si MOSFET/IGBT Gate Drive ICs
■> 20 μs Short-Circuit Withstand Capability
■Lowest-in-class Conduction Losses
■High Circuit Efficiency
■Minimal Input Signal Distortion
■High Amplifier Bandwidth
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[ Down Hole Oil Drilling ][ Geothermal Instrumentation ][ Hybrid Electric Vehicles ][ Solar Inverters ][ Switched-Mode Power Supply ][ Power Factor Correction ][ Induction Heating ][ Uninterruptible Power Supply ][ Anti-parallel Diode ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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04-APR-2016 |
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Revision: 1.0 |
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677 KB |
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