GC2X8MPS12-247 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode
●Features
■High Avalanche (UIS) Capability
■Enhanced Surge Current Capability
■Superior Figure of Merit QC/IF
■Low Thermal Resistance
■175 °C Maximum Operating Temperature
■Temperature Independent Switching Behavior
■Positive Temperature Coefficient of VF
■Extremely Fast Switching Speeds
●Advantages
■Low Standby Power Losses
■Improved Circuit Efficiency (Lower Overall Cost)
■Low Switching Losses
■Ease of Paralleling without Thermal Runaway
■Smaller Heat Sink Requirements
■Low Reverse Recovery Current
■Low Device Capacitance
■Low Reverse Leakage Current
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[ Boost Diode ][ Switched Mode Power Supply ][ Uninterruptible Power Supply ][ Freewheeling Diode ][ Anti-parallel Diode ][ Solar Inverters ][ LED ][ HID Lighting ][ AC-DC Converters ][ Auxiliary Power Supplies ] |
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Datasheet |
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Please see the document for details |
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TO-247-3L |
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English Chinese Chinese and English Japanese |
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Aug 2018 |
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Rev 1.2 |
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666 KB |
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