CS10N60 ARR Silicon N-Channel Power MOSFET
●General Description
■CS10N60 ARR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard.
●FEATURES:
■Fast Switching
■ow ON Resistance(Rdson≤0.9Ω)
■Low Gate Charge(Typical Data:32nC)
■Low Reverse transfer capacitances(Typical:7.5pF)
■100% Single Pulse avalanche energy Test
Silicon N-Channel Power MOSFET 、 silicon N-channel Enhanced VDMOSFETs |
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-262 |
|
English Chinese Chinese and English Japanese |
|
2017 |
|
V01 |
|
|
|
552 KB |
- +1 Like
- Add to Favorites
Recommend
- Técnico Solar Boat: Hydrofoil Control Using Xsens MTi-G-710 Sensor
- SMT Connector with Mit P/N 4546 - Variable Geometry to Customer Requirements, IP67 Rated, Long-Life Cycle, and Easy Adjustability to customer Requirements
- Keysight Advances Software-Centric Solutions Leadership Through the Acquisition of ESI Group
- The Differences between MOS Tube and IGBT Tube
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
- Understand the N and P MOS Operation of MOSFETs
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.