CS4N65F A9HD Silicon N-Channel Power MOSFET
■General Description:
●CS4N65F A9HD,the silicon N-channel Enhanced VDMOSFETs,is obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F,which accords with the RoHS standard.
■Features:
●Fast Switching
●ESD Improved Capability
●LOW Gate Charge (Typical Data:14.5nC)
●Low Reverse transfer capacitances(Typical:8.5pF)
●100%Single Pulse avalanche energy Test
Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2015 |
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V01 |
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402 KB |
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