PDS3805 30V P-Channel MOSFETs
●These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
●Features:
■-30V,-10A, RDS(ON) =16mΩ@VGS = -10V
■Fast switching
■Green Device Available
■Suit for -4.5V Gate Drive Applications
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P-Channel MOSFETs 、 P-Channel enhancement mode power field effect transistors |
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[ MB ][ VGA ][ Vcore ][ POL Applications ][ LED Application ] |
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Datasheet |
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Please see the document for details |
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SOP8 |
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English Chinese Chinese and English Japanese |
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2018/05/17 |
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Ver.1.00 |
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555 KB |
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