650V XPT™ Trench IGBTs Highly Efficient Low On-State Voltage IGBTs
●Product Line Introduction(650V XPT™ Trench IGBTs):
■Broadest discrete IGBTs portfolio at 650V (19 parts so far)
■From 30A to 200A current ratings at high temperature T-C= 110°C
■Developed using IXYS’ eXtreme-light Punch-Through (XPT™) thin-wafer technology and state-of-the-art Trench IGBT process
■Designed for high-efficiency power conversion applications
■Low on-state voltages
■Short circuit capability (10μs)
■Low gate drive requirements
■Available in international standard packages (TO-247, TO-264, SOT-227B, PLUS247, ISOPLUS247™)
■Also available (upon request) in surface-mountable ultra-low profile SMPD and Mini-SMPD packages
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IXXH30N65B4 、 IXXH60N65B4H1 、 IXXH60N65B4 、 IXXH60N65C4 、 IXXH40N65B4 、 IXXR110N65B4H1 、 IXXH80N65B4 、 IXXH80N65B4H1 、 IXXN110N65C4H1 、 IXXN110N65B4H1 、 IXXH110N65C4 、 IXXK110N65B4H1 、 IXXX110N65B4H1 、 IXXK160N65C4 、 IXXX160N65C4 、 IXXK160N65B4 、 IXXX160N65B4 、 IXXK200N65B4 、 IXXX200N65B4 |
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Quick Reference Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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March 2013 |
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768 KB |
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