BSS127 0.021A, 600V ENHANCEMENT N-CHANNEL MOSFET
●DESCRIPTION
■The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.
●FEATURES
■RDS(ON)≤ 600Ω @ VGS= 4.5V, ID=0.016A
■RDS(ON)≤ 500Ω @ VGS=10V, ID=0.016A
■Ultra Low Gate Charge (Typical 140nC)
■Ultra High Switching Speed
|
BSS127 、 BSS127L-AE2-R 、 BSS127G-AE2-R 、 BSS127L-AE3-R 、 BSS127G-AE3-R |
|
|
Power MOSFET 、 ENHANCEMENT N-CHANNEL MOSFET 、 enhancement N-channel mode Power FET |
|
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SOT-23-3;SOT-23 |
|
|
English Chinese Chinese and English Japanese |
|
|
2019/01/05 |
|
|
|
|
|
|
|
|
385 KB |
- +1 Like
- Add to Favorites
Recommend
- What is the cold/warm/hot start in GNSS module?
- Steps of How to Do Static Observation (2)
- Keysight‘s TimeKeeper Solution Can Mitigate the Downfalls of Relying on Internet Public Time
- Top 10 Features Of MTK GNSS/GPS Modules
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- The Differences between MOS Tube and IGBT Tube
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
