Monolithic Dual P-ChannelEnhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166
■FEATURES
●Very High Impedance
●High Gate Breakdown
●Low Capacitance
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Monolithic Dual P-Channel Enhancement Mode MOSFET 、 General Purpose Amplifier |
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Datasheet |
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Please see the document for details |
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TO-99 |
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English Chinese Chinese and English Japanese |
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2017/12/06 |
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REV A |
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DS018 |
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72 KB |
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