PMPB29XNEA 30 V, N-channel Trench MOSFET
●N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
●Features and benefits:
■Low threshold voltage
■Trench MOSFET technology
■Side wettable flanks for optical solder inspection
■ElectroStatic Discharge (ESD) protection > 500 V HBM (class H1B)
■AEC-Q101 qualified
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N-channel Trench MOSFET 、 N-channel enhancement mode Field-Effect Transistor |
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[ Relay driver ][ High-speed line driver ][ Low-side load switch ][ Switching circuits ] |
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Datasheet |
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Please see the document for details |
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DFN2020MD-6;SOT1220 |
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English Chinese Chinese and English Japanese |
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10 September 2018 |
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547 KB |
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