3rd generation SiC MOSFET technology

PublishTime： 2025-10-15 Manufacturer： HUA XUAN YANG ELECTRONIC Type： Datasheet Language： English

Optimized package with separate driver source pin, high blocking voltage with low on-resistance, high-speed switching with low capacitances, fast intrinsic diode with low reverse recovery (Qrr), halogen free, RoHS compliant

技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台	世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道	世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供	世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应	世强硬创平台www.sekorm.com

Data section preview(2pages)

- The full preview is over. If you want to read the whole 8 page document ,please Sign in/Register -

Download Documentation will be sent to the business email and automatically synchronized to all devices for easy management

+1 Like
Add to Favorites

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Recommend

CRXQF80M120G1 SiC MOSFET 1200V, 64mΩ, 36A

2022/6/24 - Datasheet

SIC场效应晶体管,SIC MOSFET,CRXQF80M120G1

ZX1280D70 SiC MOSFET

October 27, 2025 - Datasheet

SIC场效应晶体管,SIC MOSFET,ZX1280D70

ACM065H026TL Wide bandgap SiC MOSFET

2023/12/01 - Datasheet

N-CHANNEL SILICON CARBIDE POWER MOSFET,N沟道碳化硅功率场效应管,ACM065H026TL

HX1M025170K SiC MOSFET

Datasheet

SIC场效应晶体管,SIC MOSFET,HX1M025170K

CRXQ80M120G1 SiC MOSFET 1200V, 64mΩ, 36A

2022/6/24 - Datasheet

SIC场效应晶体管,SIC MOSFET,CRXQ80M120G1

NTH4L020N120SC1 SiC MOSFET Datasheet

Datasheet The NTH4L020N120SC1 is a 3rd generation SiC MOSFET featuring 1200V blocking voltage, low on-resistance, and high-speed switching. It utilizes an optimized TO-247H-4L package with a separate driver source pin to reduce switching losses and gate ringing, suitable for renewable energy and EV applications.

SIC POWER MOSFET,SIC功率场效应晶体管,NTH4L020N120SC1

P3M12020K4 N-Channel Enhancement Mode SiC MOSFET

Mar. 2024 - Datasheet

N-CHANNEL ENHANCEMENT MODE SIC MOSFET,N沟道增强型SIC MOSFET,P3M12020K4

More Version(s)

SiC MOSFET P3M12080K4

Feb. 2025 - Datasheet

SIC场效应晶体管,SIC MOSFET,P3M12080K4

IV1Q12017T4G SiC MOSFET Datasheet

Datasheet The IV1Q12017T4T4G is a 1200V, 115A SiC MOSFET featuring 3rd generation technology, low on-resistance, and high-speed switching. It is designed for applications including solar inverters, EV motor drives, and power supplies.

SIC POWER MOSFET,SIC功率场效应晶体管,IV1Q12017T4G

C3MTM SiC MOSFET

Datasheet

SIC场效应晶体管,SIC MOSFET,UJ3C120070K3S-A,UJ3C120070K3S

More Version(s)

IV1Q06040T4 SiC MOSFET Datasheet

Datasheet 3rd generation SiC MOSFET with 1200V blocking voltage and low on-resistance. Features optimized TO-247H-4L package, high-speed switching, and fast intrinsic diode. Suitable for solar inverters, EV motor drives, and high voltage DC/DC converters.

SIC POWER MOSFET,SIC功率场效应晶体管,IV1Q06040T4