FCP165N65S3 Power MOSFET Product Overview

PublishTime： 2019-07-23 Manufacturer： ON Semiconductor Type： Datasheet Language： English

●SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
●Features
■700 V @ TJ = 150 °C
■Ultra Low Gate Charge (Typ. Qg = 39 nC)
■Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
■Internal Gate Resistance: 4.6 Ω
■Optimized Capacitance
■Typ. RDS(on) = 140 mΩ
■100% Avalanche Tested
■RoHS Compliant
●Benefits
■Higher system reliability at low temperature operation
■Lower switching loss
■Lower switching loss
■Lower peak Vds and lower Vgs oscillation
■Lower peak Vds and lower Vgs oscillation

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