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XD100L065CHH1S3

XDM

VCE(sat)(typ.) =1.4V@VGE=15V, IC=100A.Low Switching Losses,Low collector-emitter saturation voltage,Low gate charge.

  • XD100L065CHH1S3

    XDM

    Trench Field-Stop Technology IGBT

    XD100L065CHH1S3 series

    VCE(sat)(typ.) =1.4V@VGE=15V, IC=100A.Low Switching Losses,Low collector-emitter saturation voltage,Low gate charge.

    TO247-3

    MPQ：1

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Specifications

Order Number XD100L065CHH1S3
Brand XDM
Series XD100L065CHH1S3
Product Category Trench Field-Stop Technology IGBT
Description VCE(sat)(typ.) =1.4V@VGE=15V, IC=100A.Low Switching Losses,Low collector-emitter saturation voltage,Low gate charge.
Package/Case/Size TO247-3
MPQ 1
Packing Type
Product Life Cycle 有效(ACTIVE)
Discontinued Time
VCE 650V
IC 100A
VCEsat, Tvj=25℃ 1.4V
Tvjmax 175℃
Maximum Power Dissipation (IGBT) 469W
Diode pulsed current 400A
Diode Continuous Forward Current (TC=100℃) 100A
Diode Continuous Forward Current (TC=25℃) 110a

Documents

Datasheet - English
XD100L065CHH1S3 Trench Field-Stop Technology IGBT Ver1.0
Preview|Download

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