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LR045N10S1

Long-Tek

N沟道 SGT MOS 漏源电压(Vdss):100V 漏极电流(Id):200A 阈值电压(Vth):3V 导通电阻(RDS(on)):3.2mΩ

  • LR045N10S1

    Long-Tek

    MOSFET

    LR045N10S1 series

    N沟道 SGT MOS 漏源电压(Vdss):100V 漏极电流(Id):200A 阈值电压(Vth):3V 导通电阻(RDS(on)):3.2mΩ

    TO-247

    MPQ：600

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Specifications

Order Number LR045N10S1
Brand Long-Tek
Series LR045N10S1
Product Category MOSFET
Description N沟道 SGT MOS 漏源电压(Vdss):100V 漏极电流(Id):200A 阈值电压(Vth):3V 导通电阻(RDS(on)):3.2mΩ
Package/Case/Size TO-247
MPQ 600
Packing Type
Product Life Cycle ACTIVE
Discontinued Time
BV 100
ID (A) @TC=25°C 200
Vth Typ (V) 3
Ron(mΩ) typ @ 10V 3.2

Documents

Datasheet - English
LR045N10S1 N-MOSFET TO-247 100V,200A,3.2mΩ Rev:0.0
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