【产品】导通电阻3mΩ的N沟道先进功率MOSFET RU3070M3，具有卓越的FOM指标
国产功率半导体器件公司深圳市锐骏半导体最近推出一款N沟道先进功率MOSFET — RU3070M3，该器件采用先进的TrenchTM技术设计制造，具有卓越的FOM(MOSFET优值系数，其值为QgxRDS(on)) ，是开关应用系统、服务器板载电源、DC/DC转换器的应用的理想器件。
图1. 产品外观与封装
产品特性
l 30V/70A
RDS (ON) =3mΩ(Typ.)@VGS=10V
RDS (ON) =3.6mΩ(Typ.)@VGS=4.5V
l 采用先进的TrenchTM技术设计
l 卓越的Qg x RDS(ON)产品特性（FOM）
l 100%雪崩测试
l 认证符合JEDEC标准
l 无铅、绿色环保器件，符合RoHS
绝对最大额定值
电气参数(Tc=25℃，除非另外说明)
标注：
1. 脉冲宽度限制在安全运行范围
2. 在最大允许结温条件下计算连续电流，该封装极限电流40A
3. 安装在1英寸方形铜基板上测试，时间t≤10sec
4. 测试受限于最大结温，开始测试结温Tj=25℃，IAS =25A, VDD = 24V, RG = 50Ω
5. 脉冲测试，宽度≤300µs，占空比小于≤2%
订购信息
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