【产品】采用超高密度单元设计的N沟道先进功率MOSFETRU3560L,最大耗散功率可达50W
锐骏半导体推出一款N沟道先进功率MOSFET—RU3560L,该器件漏源电压绝对最大额定值为40V,连续漏极电流为50A(VGS=10V,TC=25℃)。该MOSFET器件采用超高密度单元设计,具有典型值为13mΩ(@VGS=10V,IDS=25A)的漏源导通电阻,最大耗散功率可达50W(TC=25℃);产品可靠性高、坚固耐用,适合应用在低压逆变器中。产品实物图和等效电路图如下。
产品特性
l 40V/50A
RDS (ON) =13mΩ(Typ.)@VGS=10V
RDS (ON) =18mΩ(Typ.)@VGS=4.5V
l 超高密度单元设计
l 高可靠性,坚固耐用
l 可快速切换,具有完全雪崩额定值
l 无铅、绿色环保器件,符合RoHS标准
绝对最大额定值
电气参数(TA=25℃,除非另外说明)
标注:
1. 脉冲宽度受限于安全工作区域
2. 在最大允许结温条件下计算连续电流,测试电流不超过键合线最大允许的电流。
3. 测试受限于最大结温,开始测试结温Tj=25℃,IAS =20A, VDD =30V, RG = 50Ω
4. 脉冲测试,脉宽≤300µs,占空比小于≤2%
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