130W Unmatched Packaged Gallium Nitride Transistor CHKA011aSXA With High Efficiency 75% Pae, Operating up to 1.5GHz
The CHKA011aSXA is a 130W unmatched packaged Gallium Nitride Transistor.
This transistor in flange metal ceramic power package can operate up to 1.5GHz and exhibits a very high PAE of 75% and a saturated output power of 150W. It may be used in Pulsed or CW modes.
The CHKA011aSXA has been developed for multi-purpose applications, for example radar and telecommunication. This product is developed on an in house 0.5µm gate length GaN HEMT process. It requires an external matching network.
Main Features:
Frequency range: DC - 1.5GHz
Pulsed and CW operating modes
High power: 130W
High efficiency: 75% PAE
Psat: 150W
DC bias: Vd=50V @ Id=640mA
Flange metal ceramic package
VDS = 50V, ID_Q=640mA, Pin=32dBm
Pulsed mode (25µs, 10%)
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