V10170C-M3
www.vishay.com
Vishay General Semiconductor
Revision:01-Dec-16
1
Document Number: 89940
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.57 V at I
F
= 2.5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 5 A
V
RRM
170 V
I
FSM
80 A
V
F
at I
F
= 5.0 A 0.65 V
T
J
max. 175 °C
Package TO-220AB
Diode variation Dual common cathode
TO-220AB
1
2
3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
V10170C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10170C UNIT
Maximum repetitive peak reverse voltage V
RRM
170 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
10
A
per diode 5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
V10170C-M3
www.vishay.com
Vishay General Semiconductor
Revision:01-Dec-16
2
Document Number: 89940
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 20 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 2.5 A
T
A
= 25 °C
V
F
(1)
0.74 -
V
I
F
= 5.0 A 0.84 1.03
I
F
= 2.5 A
T
A
= 125 °C
0.57 -
I
F
= 5.0 A 0.65 0.74
Reverse current per diode
V
R
= 136 V
T
A
= 25 °C
I
R
(2)
0.3 - μA
T
A
= 125 °C 0.9 - mA
V
R
= 170 V
T
A
= 25 °C - 90 μA
T
A
= 125 °C 1.3 10 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10170C UNIT
Typical thermal resistance
per diode
R
JC
3.0
°C/W
per device 1.7
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V10170C-M3/4W 1.87 4W 50/tube Tube
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Case Temperature (°C)
Rth
J-A
=Rth
J-C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
0123456
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p