RB522FS-30
Schottky Barrier Diode
Datasheet
●Outline
DSN0402 SOD-992 SMD0402
●Features
●Inner Circuit
Small silicon package (SMD0402)
High Accuracy Manufacturing
Dimension tolerance±10um
Low V
F
●Applications
General rectification
●Packaging Specification
●Absolure Maximum Ratings (Ta=25
o
C)
Symbol
V
RM
V
R
I
O
I
FSM
T
j
T
stg
●Characteristics (Tj=25℃unless otherwise stated)
Symbol Unit
V
F
mV
I
R
μA
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© 2018 ROHM Co., Ltd. All rights reserved.
1/5
Rev.002
mV
mA
mA
Forward Voltage
Storage Temperature
-
-40～+150
ºC
Parameter
Conditions
Min.
Typ.
Max.
370
7
60Hz half sin wave, one cycle, non-repetitive
at T
a
=25ºC
500
mA
Operating Junction Temperature
-
150
ºC
Non-repetitive Forward Current Surge Peak
Reverse Current
I
F
=10mA
－
290
V
R
=10V
－
2.8
Reverse Voltage
Direct Reverse Voltage
30
V
Average forward rectified current
Glass epoxy board mounted, 60Hz half sin
wave, resistive load
100
mA
V
Parameter
Conditions
Limits
Unit
Repetitive Peak Reverse Voltage
Duty≦0.5
30
2018/6/19
VF
370
IO
100
IFSM
500
27000
T27R
F
Embossed Tape
180
8
●Characteristic Curves
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© 2018 ROHM Co., Ltd. All rights reserved.
2/5
2018/06/19 Rev.002
0.1
1
10
1 10 100
1
10
100
0 5 10 15 20 25 30
T
j
=25℃
f=1MHz
0.01
0.1
1
10
100
1000
10000
0 10 20 30
T
j
=125℃
T
j
=75℃
T
j
=25℃
T
j
=-25℃
1
10
100
0 100 200 300 400 500 600 700 800
FORWARD VOLTAGE：V
F
(mV)
FORWARD CURRENT:I
F
(mA)
REVERSE CURRENT:I
R
(uA)
REVERSE VOLTAGE：V
R
(V)
CAPACITANCE BETWEEN
TERMINALS:C
t
(pF)
REVERSE VOLTAGE:V
R
(V)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
T
j
=125℃
T
j
=75℃
T
j
=-25℃
T
j
=25℃
V
F
-I
F
CHARACTERISTICS
V
R
-I
R
CHARACTERISTICS
V
R
-C
t
CHARACTERISTICS
I
FSM
-t CHARACTERISTICS
t
I
FSM
1cyc
T
a
=25℃
Datasheet
RB522FS-30