V
RSM
= 90 V, I
F(AV)
= 2.0 A
Schottky Diode
SJPB-H9 Data Sheet
SJPB-H9-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 1
Jun. 28, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Description
The SJPB-H9 is a 90 V, 2.0 A Schottky diode with
allowing improvements in V
F
and I
R
characteristics.
These characteristic features contribute to improving
power supply efficiency and to enabling high-frequency
systems.
Features
● V
RSM
------------------------------------------------------ 90 V
● I
F(AV)
------------------------------------------------------ 2.0 A
● V
F
(I
F
= 2.0 A) ----------------------------------- 0.75 V typ.
● Bare Lead Frame: Pb-free (RoHS Compliant)
● Suitable for High Reliability and Automotive
Requirement
Applications
The high speed switching applications as follows:
● DC-DC Converter
● Adapter
Package
SJP
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
余白上 35mm
(2)
(1)
SJPB-H9
SJPB-H9-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 2
Jun. 28, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Rating
Unit
Conditions
Peak Repetitive Reverse Voltage
V
RSM
90
V
Repetitive Reverse Voltage
V
RM
90
V
Average Forward Current
I
F(AV)
2.0
A
See Figure 1 and Figure 2
Surge Forward Current
I
FSM
40
A
Half cycle sine wave,
positive side, 10 ms, 1 shot
I
2
t Limiting Value
I
2
t
8.0
A
2
s
1 ms ≤ t ≤ 10ms
Junction Temperature
T
J
−40 to 150
°C
Storage Temperature
T
STG
−40 to 150
°C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V
F
I
F
= 2.0 A
—
0.75
0.85
V
Reverse Leakage Current
I
R
V
R
= V
RM
—
—
2
mA
Reverse Leakage Current
Under High Temperature
H∙I
R
V
R
= V
RM
, T
J
= 150 °C
—
—
55
mA
Thermal Resistance
(1)
R
th(J-L)
—
—
20
°C/W
(1)
R
th (J-L)
is thermal resistance between junction and lead.