V
RSM
= 60 V, I
F(AV)
= 1.0 A
Schottky Diode
SJPB-D6 Data Sheet
SJPB-D6-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 1
May 19, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
Description
The SJPB-D6 is a 60 V, 1.0 A Schottky diode with
allowing improvements in V
F
and I
R
characteristics.
These characteristic features contribute to improving
power supply efficiency and to enabling high-frequency
systems.
Features
● V
RSM
------------------------------------------------------ 60 V
● I
F(AV)
------------------------------------------------------ 1.0 A
● V
F
(I
F
= 1.0 A) --------------------------------- 0.58 V typ.
● Bare Lead Frame: Pb-free (RoHS Compliant)
● Suitable for High Reliability and Automotive
Requirement
Applications
The high speed switching applications as follows:
● DC-DC Converter
● Adapter
Package
SJP
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
余白上 35mm
(2)
(1)
SJPB-D6
SJPB-D6-DSE Rev.1.0 SANKEN ELCTRIC CO., LTD. 2
May 19, 2017 http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2017
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Rating
Unit
Conditions
Peak Repetitive Reverse Voltage
V
RSM
60
V
Repetitive Reverse Voltage
V
RM
60
V
Average Forward Current
I
F(AV)
1.0
A
See Figure 1 and Figure 2
Surge Forward Current
I
FSM
20
A
Half cycle sine wave,
positive side, 10 ms, 1 shot
I
2
t Limiting Value
I
2
t
2.0
A
2
s
1 ms ≤ t ≤ 10 ms
Junction Temperature
T
J
−40 to 150
°C
Storage Temperature
T
STG
−40 to 150
°C
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
—
0.58
0.68
V
Reverse Leakage Current
I
R
V
R
= V
RM
—
—
100
µA
Reverse Leakage Current
Under High Temperature
H∙I
R
V
R
= V
RM
, T
J
= 150 °C
—
—
30
mA
Thermal Resistance
(1)
R
th(J-L)
—
—
20
°C/W
(1)
R
th (J-L)
is thermal resistance between junction and lead.