20
STERN
AVE.
SPRINGFIELD,
NEW
JERSEY
07081
USA
TELEPHONE:
i
FAX:i
^73)376-2922
113)227-6000
973)3794060
RF
TRANSISTORS
2N3932
2N3933
•2N3932
and
2N3933
are
epitaxial
planar
tran-
sistors
of the
silicon
npn
type,
with
characteristics
which
make
them
extremely
useful
as
general-purpose
rf
amplifiers
at
frequencies
up to 450
MHz.
These
characteristics
include
low
noise
figures
at 60,
200,
and
460
MHz
low
feedback
capacitance,
high
gain-bandwidth
product,
and
high
power
gains
in
un-
neutralized
amplifier
circuits.
The
2N3932
and
2N3933
utilize
a
compact,
her-
metically
sealed
four-lead
metal package,
in
which
the
active
elements
of the
transistor
are
insulated
from
the
case.
The
construction
of
these
devices
contributes
to
highly
reliable
performance
at
very-
and
ultra-high-
frequencies,
and
permits
grounding
of the
case
to
mini-
mize
feedback
capacitances
and
undesired
coupling
-a
feature
not
available
in
devices
using
conventional
epoxy-type
enclosures.
Maximum
Rating*,
Abioluti-Maximum
Valuti:
2N3932
2N3933
Collector-to-Baee
Voltage,
VggQ
30 40
max.
V
Colleotor-to-Emitter
Voltage,
CEO
Emitter-to-Baae
Voltage,
EBO
20
2.5
30
max.
2,5
max.
Collector Current,
IQ
limited
by
dissipation
Transistor
Diaaipation,
Pj:
at
ambient
/
up
to
25°
C...
200 200
max.
mW
temperatures
(
above
25°
C See
Pig.
1
Temperature
Range:
Storage
and
Operating
(Junction)
Lead Temperature
(During
Soldering))
At
distances
not
less
than
1/16"
from
seat*
ing
surface
for
10
seconds
-65
to
200«
C
265
265
max.
°C
SILICON
NPN
EPITAXIAL
PLANAR
TYPES
For VHF and IMF
Applications
in
Industrial
and
Military
Equipment
FEATURES
•
low
nelt*
figurtf
(NF):
2N3932
2N3933
2.5 dB
typ.
4.5 dB
max.
5 dB
typ.
•
high
gain-bandwidth
product
(f
j):
750 MHz
min.
for
both
typ»»
• low
colltctor-to-ba*«
time
constant
(r|,'Cc):
2N3932
= 8
pi
max.
2N3933
= 6
ps
max.
•
high
wnnoutralizod
powor
gain
(G-9)$
2N3932
=
ll.SdB
min.
at 200
MHi
2N3933
=
14 dB
min.
at 200 MHz
• low
output
capacitanco
(Ccj,):
Cet
=
0.55
pF
max.
for
both
typos
•
•
hormotically
soalod
motal
4>load
pockago
3 dB
max.
4 dB
max.
5 dB
typ.
6
60
MHz
0 200 MHz
§
450 MHz
•HOO
-MO
90
100
100
AM0CNT
TEMPERATURE
<TA)—*C
VI
.Semi-Conductors
reserves
the
right
tn
change test
conditions,
parameter
limits
;md
package
dimensions
without
notice
Information
furnished
by
NI
Scmi-C'onducton
n
believed
to he
both
ucctirate
and
reliable
.11
th«
lime
of
going
to
press.
However
M
Semi
-C
c
mdutlors
.bonnes
no
responsibility
tor
iiny
errors
or
omissions
discovered
in its use
NJ
Seini-C
undtittors
aistimcrs
to
wrir'v
lh,u
datasheets
.ire
current
before
placing
orders
200
- D •
•
A
•
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1
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R176D
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MAX
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.2"60
.259
MAX
.240
.260
.208
.208
.2*0
MAX
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MAX
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C
.500
MIN
.500
HIM
.500
MIN
.500
MIN
.748
.500
MDf
.539
.118
.74T
MIN
.925
MIN
.500
MIN
D
.230
.230
.335
.370
.370
MAX
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.370
.228
.229
.370
MAX
.369
MAX
.230
E
.036
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.036^
rw6*
.036
,046
.028
.034
.031
.028
.034
.031
.031
P
.036
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.028
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.029
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.100
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BSC
.200
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H
.016
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.019
.016
.019
-016
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.017
.016
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MAX
.019
MAX
.016
MIN
.016
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.4)30
.030
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MAX
-OOj
.125
.027
.039
.039